| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-106-1613 (001061613) |
| NCB Code | USA (00) |
| Manufacturer | Joint Electron Device Engineering, Raytheon Company, Drs Signal Solutions Inc, Military Specifications, Electronic Industries Inc, Commanding Officer, International Diode Corp, Nimikkeistokeskus Ncb Finland, Lockheed Martin Corporation, Gilbert Engineering Co Inc, Itt Semiconductors, Solid State Devices Inc, Semitronics Corp, Boeing Company The |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 1N933 | joint electron device engineering | semiconductor device diode | 07688 | RFQ |
| 1N191 | raytheon company | semiconductor device diode | 3b150 | RFQ |
| 322-1028P3 | raytheon company | semiconductor device diode | 49956 | RFQ |
| 1N198A | drs signal solutions inc | semiconductor device diode | 14632 | RFQ |
| JAN1N933 | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N933 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N191 | commanding officer | semiconductor device diode | 96916 | RFQ |
| 1N933 | international diode corp | semiconductor device diode | 16068 | RFQ |
| 425-2629 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 67200-1N198 | lockheed martin corporation | semiconductor device diode | 80070 | RFQ |
| 1N933 | gilbert engineering co inc | semiconductor device diode | 03877 | RFQ |
| 1N933 | itt semiconductors | semiconductor device diode | 14433 | RFQ |
| RELEASE3744 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N933 | solid state devices inc | semiconductor device diode | 30043 | RFQ |
| MILS19500-119 | military specifications | semiconductor device diode | 81349 | RFQ |
| 322-1028P1 | raytheon company | semiconductor device diode | 49956 | RFQ |
| JAN1N191 | military specifications | semiconductor device diode | 81349 | RFQ |
| 322-1071P1 | raytheon company | semiconductor device diode | 49956 | RFQ |
| G265283-1 | raytheon company | semiconductor device diode | 49956 | RFQ |
| 1N933 | semitronics corp | semiconductor device diode | 31338 | RFQ |
| HD2135A | boeing company the | semiconductor device diode | 8v613 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE,PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM FORWARD CURRENT,DC |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 75.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GERMANIUM SEMICONDUCTOR |
| MATT | MATERIAL | GLASS INCLOSURE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE3744 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| Relevant Components for NSN - 5961-00-106-1613, 5961001061613 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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