Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-752-5351 (007525351) |
NCB Code | USA (00) |
Manufacturer | Rca Corp, Picatinny Arsenal, Military Specifications, Lockheed Martin Corporation, Rockwell Collins Aerospace, Texas Instruments Inc, Joint Army-Navy Specifications, Northrop Grumman Systems Corporation, L 3 Communications Corporation, Telcom Semiconductor Inc, General Instrument Corporation |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
231856 | rca corp | semiconductor device diode | 21921 | RFQ |
10962611 | picatinny arsenal | semiconductor device diode | 19203 | RFQ |
JAN1N643 | military specifications | semiconductor device diode | 81349 | RFQ |
752949 | lockheed martin corporation | semiconductor device diode | 56232 | RFQ |
JANIN643 | military specifications | semiconductor device diode | 81349 | RFQ |
353-2857-00 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
1N643 | texas instruments inc | semiconductor device diode | 01295 | RFQ |
1N643 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
1N463 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
JAN1N643 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
353-2857-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
579R762H01 | northrop grumman systems corporation | semiconductor device diode | 97942 | RFQ |
MIL-S-19500/256 | military specifications | semiconductor device diode | 81349 | RFQ |
HD6565 | l 3 communications corporation | semiconductor device diode | 73293 | RFQ |
JANIN643 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
CD2653 | telcom semiconductor inc | semiconductor device diode | 15818 | RFQ |
JAN1N649 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
DR1672 | general instrument corporation | semiconductor device diode | 72699 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAV | OVERALL DIAMETER | 0.077 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 175.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE AND 200.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS |
CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT,180 DEGREES CONDUCTION ANGLE,AVERAGE OVER A FULL 60-HZ CYCLE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/256 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5961-00-752-5351, 5961007525351 | ||||
5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
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