| MRC | Criteria | Characteristic |
|---|
| ADAQ | BODY LENGTH | 1.680 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.510 INCHES MINIMUM AND 0.620 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.225 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | F-15I |
| CBBL | FEATURES PROVIDED | BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND TESTED TO MIL-STD-883 AND ELECTRICALLY ALTERABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
| CRTL | CRITICALITY CODE JUSTIFICATION | CBBL |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-16 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8 BIT 5-VOLT PROGRAMMING EEPROM, MONOLITHIC SILICON |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM ACCESS |
| CZER | MEMORY DEVICE TYPE | EEPROM |
| FEAT | SPECIAL FEATURES | CASE OUTLINE SOURCE AND DESIGNATOR IS MIL-STD-1835, GDIP1-T32 OR CDIP2-T32;ENDURANCE IS 1000 CYCLES |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 67268-5962-91682 GOVERNMENT SPECIFICATION |
