To receive competitive purchasing options on part number IDT71257L35CB by Integrated Device Technology Inc, look no further than NSN Direct. For your reference, this item has the NSN 5962-01-323-6988 and is listed with the description “Microcircuit Memory.” If this matches your needs, we encourage you to fill out the partially-completed quote request form on this page to kick off procurement. By providing comprehensive information about your requirements, such as your desired quantity, pricing, and fulfillment speed, our experts can formulate the most fitting solutions for you. We want to ensure that this process is quick and effortless, so we routinely respond to requests within 15 minutes of receiving and reviewing them.
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In addition to our streamlined quotation service, we also aim to make the process of finding products simple. As such, if you require other Integrated Device Technology Inc parts produced under the CAGE Code 61772, you can peruse our manufacturer or CAGE Code catalogs, or use our search engine and filters. Furthermore, if you want to locate items similar to part number IDT71257L35CB, you can glean from the first four digits of its NSN 5962-01-323-6988 that it belongs to the FSC 5962 Microcircuits Electronic. This being said, do not hesitate to request quotes on part number IDT71257L35CB and any other NSN parts that we feature to experience unrivaled procurement.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-323-6988 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013236988 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 77A105855P001 | 2 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND MONOLITHIC AND ELECTROSTATIC SENSITIVE |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| ADAQ | BODY LENGTH | 1.280 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
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