To receive competitive purchasing options on part number 1212248-210 by Lockheed Martin Corporation, look no further than NSN Direct. For your reference, this item has the NSN 5962-01-369-8535 and is listed with the description “Microcircuit Memory.” If this matches your needs, we encourage you to fill out the partially-completed quote request form on this page to kick off procurement. By providing comprehensive information about your requirements, such as your desired quantity, pricing, and fulfillment speed, our experts can formulate the most fitting solutions for you. We want to ensure that this process is quick and effortless, so we routinely respond to requests within 15 minutes of receiving and reviewing them.
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In addition to our streamlined quotation service, we also aim to make the process of finding products simple. As such, if you require other Lockheed Martin Corporation parts produced under the CAGE Code 56232, you can peruse our manufacturer or CAGE Code catalogs, or use our search engine and filters. Furthermore, if you want to locate items similar to part number 1212248-210, you can glean from the first four digits of its NSN 5962-01-369-8535 that it belongs to the FSC 5962 Microcircuits Electronic. This being said, do not hesitate to request quotes on part number 1212248-210 and any other NSN parts that we feature to experience unrivaled procurement.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-369-8535 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013698535 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5962-8552604LA | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| CZEQ | TIME RATING PER CHACTERISTIC | 65.00 NANOSECONDS NOMINAL ACCESS |
| ZZZT | NONDEFINITIVE SPEC/STD DATA | 210 NUMBER |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| ZZZK | SPECIFICATION/STANDARD DATA | 56232-1212248 MANUFACTURERS SPECIFICATION CONTROL |
| AGAV | END ITEM IDENTIFICATION | AN/FPS-124 |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -30.00 MILLIAMPERES MINIMUM ABSOLUTE OUTPUT AND 5.00 MILLIAMPERES MAXIMUM ABSOLUTE OUTPUT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY AND 4.5 VOLTS MINIMUM POSITIVE POWER SUPPLY SPAN AND 5.5 VOLTS MAXIMUM POSITIVE POWER SUPPLY SPAN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | PROGRAMMED |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,DIGITAL,SCHOTTKY,BIPOLAR 16,384 BIT(2KX8) PROGRAMMABLE READ-ONLY MEMORY(PROM),MONOLITHIC SILICON |
| CZER | MEMORY DEVICE TYPE | PROM |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| ZZZW | DEPARTURE FROM CITED DOCUMENT | ALTERED BY PROGRAMMING,MARKING & TESTING |
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