To receive competitive purchasing options on part number 423-800215 by Raytheon Company, look no further than NSN Direct. For your reference, this item has the NSN 5961-00-238-6889 and is listed with the description “Semiconductordeviceset.” If this matches your needs, we encourage you to fill out the partially-completed quote request form on this page to kick off procurement. By providing comprehensive information about your requirements, such as your desired quantity, pricing, and fulfillment speed, our experts can formulate the most fitting solutions for you. We want to ensure that this process is quick and effortless, so we routinely respond to requests within 15 minutes of receiving and reviewing them.
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In addition to our streamlined quotation service, we also aim to make the process of finding products simple. As such, if you require other Raytheon Company parts produced under the CAGE Code 15090, you can peruse our manufacturer or CAGE Code catalogs, or use our search engine and filters. Furthermore, if you want to locate items similar to part number 423-800215, you can glean from the first four digits of its NSN 5961-00-238-6889 that it belongs to the FSC 5961 Semiconductor Devices and Associated Hardware. This being said, do not hesitate to request quotes on part number 423-800215 and any other NSN parts that we feature to experience unrivaled procurement.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-238-6889 Item PartTypeName: SEMICONDUCTOR DEVICE SET | 5961 | 002386889 | 0 | N | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | U | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 423-800215 | 2 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM ALL TRANSISTOR |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL TRANSISTOR |
| ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALL TRANSISTOR |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT ALL TRANSISTOR |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| AXGY | MOUNTING METHOD | TERMINAL ALL TRANSISTOR |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL ALL TRANSISTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE 2ND TRANSISTOR |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE 1ST TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD ALL TRANSISTOR |
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