To receive competitive purchasing options on part number G395748-10 by Raytheon Company, look no further than NSN Direct. For your reference, this item has the NSN 5962-01-373-9122 and is listed with the description “Microcircuit Memory.” If this matches your needs, we encourage you to fill out the partially-completed quote request form on this page to kick off procurement. By providing comprehensive information about your requirements, such as your desired quantity, pricing, and fulfillment speed, our experts can formulate the most fitting solutions for you. We want to ensure that this process is quick and effortless, so we routinely respond to requests within 15 minutes of receiving and reviewing them.
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In addition to our streamlined quotation service, we also aim to make the process of finding products simple. As such, if you require other Raytheon Company parts produced under the CAGE Code 54X10, you can peruse our manufacturer or CAGE Code catalogs, or use our search engine and filters. Furthermore, if you want to locate items similar to part number G395748-10, you can glean from the first four digits of its NSN 5962-01-373-9122 that it belongs to the FSC 5962 Microcircuits Electronic. This being said, do not hesitate to request quotes on part number G395748-10 and any other NSN parts that we feature to experience unrivaled procurement.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-373-9122 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013739122 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
M38510/21101BJA | 5 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |
CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 67268-8200801JA GOVERNMENT STANDARD |
ZZZP | PURCHASE DESCRIPTION IDENTIFICATION | 49956-G395748-10 |
AGAV | END ITEM IDENTIFICATION | SUB HPA E/I FSCM 49956 |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CZEQ | TIME RATING PER CHACTERISTIC | 95.00 NANOSECONDS NOMINAL ACCESS |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
ZZZX | DEPARTURE FROM CITED DESIGNATOR | ALTERED BY PROGAMMING & MARKING |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.04 WATTS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND SCHOTTKY AND PROGRAMMED AND BIPOLAR |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,DIGITAL,SCHOTTKY BIPOLAR 32K PROM,MONOLITHIC SILICON |
CZER | MEMORY DEVICE TYPE | PROM |
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