To receive competitive purchasing options on part number G527307-401 by Raytheon Company, look no further than NSN Direct. For your reference, this item has the NSN 5962-01-388-0029 and is listed with the description “Microcircuit Memory.” If this matches your needs, we encourage you to fill out the partially-completed quote request form on this page to kick off procurement. By providing comprehensive information about your requirements, such as your desired quantity, pricing, and fulfillment speed, our experts can formulate the most fitting solutions for you. We want to ensure that this process is quick and effortless, so we routinely respond to requests within 15 minutes of receiving and reviewing them.
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In addition to our streamlined quotation service, we also aim to make the process of finding products simple. As such, if you require other Raytheon Company parts produced under the CAGE Code 3B150, you can peruse our manufacturer or CAGE Code catalogs, or use our search engine and filters. Furthermore, if you want to locate items similar to part number G527307-401, you can glean from the first four digits of its NSN 5962-01-388-0029 that it belongs to the FSC 5962 Microcircuits Electronic. This being said, do not hesitate to request quotes on part number G527307-401 and any other NSN parts that we feature to experience unrivaled procurement.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-388-0029 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013880029 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| ROM/PROM | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CZEQ | TIME RATING PER CHACTERISTIC | 25.00 NANOSECONDS NOMINAL ACCESS |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| FEAT | SPECIAL FEATURES | ONE-TIME PROGRAMMABLE |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND PROGRAMMED AND TESTED TO MIL-STD-883 |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | 22-INPUT 10-OUTPUT AND-OR0LOGIC ARRAY |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |
| AGAV | END ITEM IDENTIFICATION | USED ON:COBRA DANE NEXT ASSY:G526534 |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| CZER | MEMORY DEVICE TYPE | PAL |
| ZZZK | SPECIFICATION/STANDARD DATA | 67267-5962-8867001LA GOVERNMENT STANDARD |
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